A GaAs/Air Multilayer Cavity for a Planar-Type Nonlinear Optical Device
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概要
- 論文の詳細を見る
GaAs/air multilayer cavity structure is expected as a novel planar-type nonliner optical device because of the strong enhancement of optical electric fileds in the cavity. The optical Kerr signal was estimated to be two order of magnitude larger than that from GaAs/AlAs multilayer cavity with the same Q-value by numerical simulation. We fabricated a GaAs/air cavity structure with 2-period distributed Bragg reflector (DBR) layers on each side of the \lambda-cavity layer by wet etching of sacrificial AlGaAs layer. Measured reflection spectra showed the expected structure was successfully fabricated in some parts.
- 2013-04-25
著者
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Morita Ken
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Isu Toshiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Kitada Takahiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Nakagawa Yoshinori
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Komatsu Hidetada
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Nakagawa Yoshinori
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Zhang Zhao
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
関連論文
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- Photoluminescence Properties of Self-Assembled InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates by Molecular Beam Epitaxy under a Slow Growth Rate Condition
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