Strongly Enhanced Four-Wave Mixing Signal from GaAs/AlAs Cavity with InAs Quantnm Dots Embedded in Strain-Relaxed Barriers
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概要
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Strong ultrafast four-wave mixing signals at {\sim}1.5 μm were demonstrated in a GaAs/AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In<inf>0.35</inf>Ga<inf>0.65</inf>As barriers. Time-resolved optical measurements using 100 fs pulses with 100 kHz repetition rate were carried out in the various excitation powers at room temperature. Strongly enhanced four-wave-mixing signals were observed for a cavity with two InAs QDs layers inserted in a half-wavelength (\lambda/2) cavity layer compared with that of a GaAs \lambda/2 cavity that had no QDs, in the whole range of excitation power (0.3--2 mW). For a low excitation power below 0.6 mW, the four-wave-mixing signals were about two orders of magnitude larger than that of the GaAs \lambda/2 cavity owing to the large nonlinearity of the InAs QDs.
- 2013-04-25
著者
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Morita Ken
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Isu Toshiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Kitada Takahiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Morita Ken
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Isu Toshiro
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Yasunaga Yukinori
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Ueyama Hyuga
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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