Excitation Wavelength Dependence of Carrier Relaxation in Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed In0.35Ga0.65As Barrier Layers
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概要
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Excitation wavelength dependence ($\lambda = 1350--1550$ nm) of carrier relaxation was investigated for self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In0.35Ga0.65As barriers grown on GaAs(100) substrates. Fast ($\tau \sim 12--17$ ps) and slow ($\tau \sim 350$ ps) decay components were observed in the time-resolved transmission change measurements by a pump-probe method. Decay time of the fast component becomes faster as the excitation wavelength is shortened, indicating that photo-generated carries in the smaller-size QDs more easily escape into the nonradiative centers arising from the crystal defects related to the lattice-mismatch. In addition, the slow decay component attributed to the radiative recombination process was strongly suppressed for the shorter wavelength excitation.
- 2009-04-25
著者
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Morita Ken
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Takahashi Tomoya
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Isu Toshiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Kitada Takahiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Mukai Takuya
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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