Enhanced Two-Photon Absorption in a GaAs/AlAs Multilayer Cavity
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概要
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A strong enhancement of two-photon absorption (TPA) has been demonstrated in a 30-period GaAs/AlAs multilayer with a GaAs half-wavelength ($\lambda$/2) cavity layer. In order to measure the time-resolved TPA signals, we successfully developed a selective etching process using an etch-stopper structure consisting of 5-nm-thick AlAs and 200-nm-thick Al0.3Ga0.7As double layers for removing the GaAs substrate. An analysis of the observed TPA results reveals that the average light intensity of the multilayer cavity is 41 times larger than that of a GaAs bulk sample. The obtained enhancement factor is in good agreement with the simulated value (45 times larger), which is determined from the simulated light intensity distribution by the conventional transfer matrix method.
- 2009-04-25
著者
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Morita Ken
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Isu Toshiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Kitada Takahiro
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Kanbara Toshiyuki
Center For Frontier Research Of Engineering Institute Of Technology And Science The University Of To
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Yano Shinsuke
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Nakano Shoya
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Kanbara Toshiyuki
Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
関連論文
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