Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission

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概要

著者

Sakata Isao
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
Sakata Isao
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology A
KAWANAMI Hitoshi
National Institute of Advanced Industrial Science and Technology

関連論文

Very low temperature epitaxial growth of silicon films for solar cells
Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells
Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
Quinhydrone/Methanol Treatment for the Measurement of Carrier Lifetime in Silicon Substrates : Semiconductors
Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment(Semiconductors)
Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone-Methanol Treatment for Minority Carrier Lifetime Measurements
Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission
Passivation of germanium surfaces by a quinhydrone-methanol solution treatment
Passivation of Germanium Surfaces by a Quinhydrone--Methanol Solution Treatment
Ultrafast Active Transmission Lines with Low-k Polyimide Integrated with Ultrafast Photoconductive Switches
Very Low Temperature Epitaxial Growth of Silicon Films for Solar Cells
Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells
Ultrafast Active Transmission Lines with Low-$k$ Polyimide Integrated with Ultrafast Photoconductive Switches

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