Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone-Methanol Treatment for Minority Carrier Lifetime Measurements
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-10-25
著者
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Swain Bibhu
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology A
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Sakata Isao
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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TAKATO Hidetaka
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology,
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SAKATA Isao
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology,
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Sakata Isao
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology A
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Takato Hidetaka
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology A
関連論文
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- Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells
- Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
- Quinhydrone/Methanol Treatment for the Measurement of Carrier Lifetime in Silicon Substrates : Semiconductors
- Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment(Semiconductors)
- Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone-Methanol Treatment for Minority Carrier Lifetime Measurements
- Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission
- Passivation of germanium surfaces by a quinhydrone-methanol solution treatment
- Passivation of Germanium Surfaces by a Quinhydrone--Methanol Solution Treatment
- Very Low Temperature Epitaxial Growth of Silicon Films for Solar Cells
- Low-Temperature Back-Surface-Field Structures Applied to Crystalline Silicon Solar Cells : Two-Step Growth with Hydrogen Plasma Treatment for Improving the Reproducibility (Special Issue : Photovoltaic Science and Engineering)
- Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
- Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells