Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
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概要
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We have measured for the first time the band lineup at the interface between boron-doped p-type hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) by internal photoemission and have found that the band discontinuity mainly exists on conduction-band (CB) side in this type of heterojuctions. This band lineup is related with the low back-surface recombination velocity observed in n+(c-Si) - p(c-Si) - p+(a-Si:H) solar cells.
- 2004-07-15
著者
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Sakata Isao
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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YAMANAKA Mitsuyuki
National Institute of Advanced Industrial Science and Technology
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SHIMOKAWA Ryuichi
National Institute of Advanced Industrial Science and Technology
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- Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells