Sakata Isao | National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
スポンサーリンク
概要
関連著者
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Sakata Isao
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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SHIMOKAWA Ryuichi
National Institute of Advanced Industrial Science and Technology
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YAMANAKA Mitsuyuki
National Institute of Advanced Industrial Science and Technology
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Sakata Isao
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology A
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Sakata Isao
National Institute Of Advanced Industrial Science And Technology (aist)
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TAKATO Hidetaka
National Institute of Advanced Industrial Science and Technology (AIST)
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Sakata Isao
Toyo-hakka Co. Ltd.
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Shimokawa R
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Takato H
National Institute Of Advanced Industrial Science And Technology (aist)
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Swain Bibhu
Research Center For Photovoltaics National Institute Of Advanced Industrial Science And Technology A
著作論文
- Very low temperature epitaxial growth of silicon films for solar cells
- Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells
- Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
- Quinhydrone/Methanol Treatment for the Measurement of Carrier Lifetime in Silicon Substrates : Semiconductors
- Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment(Semiconductors)
- Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone-Methanol Treatment for Minority Carrier Lifetime Measurements
- Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission
- Passivation of germanium surfaces by a quinhydrone-methanol solution treatment
- Very Low Temperature Epitaxial Growth of Silicon Films for Solar Cells
- Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission