Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells
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概要
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We have found that the back-surface recombination velocity, $S_{\text{b}}$, of minority carriers in crystalline silicon (c-Si) thin film solar cells can be reduced to less than $10^{3}$ cm/s when a boron (B)-doped p-type hydrogenated amorphous silicon (a-Si:H) layer is deposited on the back surface of a p-type c-Si substrate at 200°C, while the value of $S_{\text{b}}$ is $10^{6}$ cm/s when a B-doped p-type layer is epitaxially grown on the c-Si substrate. We have clarified, from internal photoemission (IPE) and attenuated-total-reflection Fourier transform infrared (ATR-FTIR) spectroscopy measurements, that the band lineup of the heterojunction between B-doped p-type a-Si:H and c-Si and the hydrogen passivation of defects in B-doped a-Si:H are possible reasons for the observed low value of $S_{\text{b}}$.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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Sakata Isao
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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YAMANAKA Mitsuyuki
National Institute of Advanced Industrial Science and Technology
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SHIMOKAWA Ryuichi
National Institute of Advanced Industrial Science and Technology
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- Very Low Temperature Epitaxial Growth of Silicon Films for Solar Cells
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- Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells