SHIMOKAWA Ryuichi | National Institute of Advanced Industrial Science and Technology

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著作論文

Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
Quinhydrone/Methanol Treatment for the Measurement of Carrier Lifetime in Silicon Substrates : Semiconductors
Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment(Semiconductors)
Development of Wide Field-of-View Cavity Radiometer for Solar Simulator Use and Intercomparison between Irradiance Measurements based on the World Radiometer Reference and Electrotechnical Laboratory Scales
Very Low Temperature Epitaxial Growth of Silicon Films for Solar Cells
Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells

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