Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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TAKAGI Shinichi
Graduate School of Frontier Science, The Univ. of Tokyo
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SUGAHARA Satoshi
Graduate School of Frontier Science, The Univ. of Tokyo
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UCHIDA Yasutaka
Teikyo University of Science and Technology
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Sugahara Satoshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Ishikawa Hiroto
Graduate School Of Frontier Science The Univ. Of Tokyo
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Uchida Yasutaka
Teikyo Univ. Of Sci & Tech Dept Of Media Science
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SHICHIJO Masato
Graduate School of Frontier Science, The Univ. of Tokyo
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KUMAGAI Hiroshi
Graduate School of Frontier Science, The Univ. of Tokyo
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HOSHII Takuya
Graduate School of Frontier Science, The Univ. of Tokyo
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Hoshii Takuya
Graduate School Of Frontier Science The Univ. Of Tokyo
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Shichijo Masato
Graduate School Of Frontier Science The Univ. Of Tokyo
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Takagi Shinichi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Kumagai Hiroshi
Graduate School Of Frontier Science The Univ. Of Tokyo
関連論文
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- Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs
- Fabrication of 3-5 on insulator structures on Si using microchannel epitaxy with a two-step growth technique
- Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique
- Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge
- TDS measurement for low-k porous silica films incorporated with ethylene groups
- Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth
- Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si
- Evaluation of SiO_2/GeO_2/Ge MIS Interface Properties by Low Temperature Conductance Method
- Fabrication of III–V on Insulator Structures on Si Using Microchannel Epitaxy with a Two-Step Growth Technique
- Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors