Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Sugahara Satoshi

  Graduate School Of Frontier Science The Univ. Of Tokyo

• Sugahara Satoshi

  Graduate School Of Frontier Science The University Of Tokyo

• TAKAGI Shin-ichi

  Graduate School of Frontier Science, The University of Tokyo

• Takagi Shin-ichi

  Graduate School Of Frontier Science The University Of Tokyo

関連論文

• Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs
• Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs
• Fabrication of 3-5 on insulator structures on Si using microchannel epitaxy with a two-step growth technique
• Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique
• Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge
• Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth
• Evaluation of SiO_2/GeO_2/Ge MIS Interface Properties by Low Temperature Conductance Method
• Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy
• Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

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