Takagi Shin-ichi | Graduate School Of Frontier Science The University Of Tokyo
スポンサーリンク
概要
関連著者
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Takagi Shin-ichi
Graduate School Of Frontier Science The University Of Tokyo
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Sugahara Satoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Sugahara Satoshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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TAKAGI Shin-ichi
Graduate School of Frontier Science, The University of Tokyo
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Matsubara Hiroshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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KUMAGAI Hiroshi
Graduate School of Frontier Science, The Univ. of Tokyo
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Takenaka Mitsuru
School Of Engineering The University Of Tokyo
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Nakane Ryosho
School Of Engineering The Univ. Of Tokyo
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Hoshii Takuya
Graduate School Of Frontier Science The Univ. Of Tokyo
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Uehara Takashi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Sugahara Satoshi
Graduate School Of Science And Technology Tokyo Institute Of Technology
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Sugahara Satoshi
Graduate School Of Frontier Science The University Of Tokyo
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MATSUBARA Hiroshi
Graduate School of Frontier Science, The Univ. of Tokyo
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Kumagai Hiroshi
Graduate School Of Frontier Science The University Of Tokyo
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Kumagai Hiroshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Matsubara Hiroshi
Graduate School Of Frontier Science The University Of Tokyo
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Nakane Ryosho
School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
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Sugahara Satoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Uehara Takashi
Graduate School of Frontier Science, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
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Hoshii Takuya
Graduate School of Frontier Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Takagi Shin-ichi
Graduate School of Frontier Science, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
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Takagi Shin-ichi
Graduate School of Frontier Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
著作論文
- Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs
- Evaluation of SiO_2/GeO_2/Ge MIS Interface Properties by Low Temperature Conductance Method
- Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy
- Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors