Takenaka Mitsuru | School Of Engineering The University Of Tokyo
スポンサーリンク
概要
関連著者
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Takenaka Mitsuru
School Of Engineering The University Of Tokyo
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Sugahara Satoshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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KUMAGAI Hiroshi
Graduate School of Frontier Science, The Univ. of Tokyo
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Nakane Ryosho
School Of Engineering The Univ. Of Tokyo
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Sugahara Satoshi
Graduate School Of Science And Technology Tokyo Institute Of Technology
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MATSUBARA Hiroshi
Graduate School of Frontier Science, The Univ. of Tokyo
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TAKAGI Shin-ichi
Graduate School of Frontier Science, The University of Tokyo
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Kumagai Hiroshi
Graduate School Of Frontier Science The University Of Tokyo
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Kumagai Hiroshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Matsubara Hiroshi
Graduate School Of Frontier Science The University Of Tokyo
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Matsubara Hiroshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Takagi Shin-ichi
Graduate School Of Frontier Science The University Of Tokyo
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Sugahara Satoshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Takagi Shinichi
School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Morii Kiyohito
School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Dissanayake Sanjeewa
School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Tanabe Satoshi
School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Weber Olivier
School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-0032, Japan
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Takagi Shin-ichi
School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-0032, Japan
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Takenaka Mitsuru
School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-0032, Japan
著作論文
- Evaluation of Electron and Hole Mobility at Identical Metal–Oxide–Semiconductor Interfaces by using Metal Source/Drain Ge-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
- Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal–Oxide–Semiconductor Field-Effect Transistors
- Evaluation of SiO_2/GeO_2/Ge MIS Interface Properties by Low Temperature Conductance Method