Nakane Ryosho | School Of Engineering The Univ. Of Tokyo
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概要
関連著者
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Nakane Ryosho
School Of Engineering The Univ. Of Tokyo
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Sugahara Satoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Shichijo Masato
Graduate School Of Frontier Science The Univ. Of Tokyo
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Takagi Shinichi
Graduate School Of Frontier Science The Univ. Of Tokyo
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TAKAGI Shinichi
Graduate School of Frontier Science, The Univ. of Tokyo
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SUGAHARA Satoshi
Graduate School of Frontier Science, The Univ. of Tokyo
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Sugahara Satoshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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SHICHIJO Masato
Graduate School of Frontier Science, The Univ. of Tokyo
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NAKANE Ryosho
School of Engineering, The Univ. of Tokyo
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Takenaka Mitsuru
School Of Engineering The University Of Tokyo
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Uehara Takashi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Matsubara Hiroshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Takagi Shin-ichi
Graduate School Of Frontier Science The University Of Tokyo
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Nakane Ryosho
School of Engineering, The University of Tokyo, Tokyo 113-0032, Japan
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Nakane Ryosho
School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
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Sugahara Satoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Sugahara Satoshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Takagi Shinichi
Graduate School of Frontier Science, The University of Tokyo, Tokyo 133-0032, Japan
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Takagi Shinichi
School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Morii Kiyohito
School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Dissanayake Sanjeewa
School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Tanabe Satoshi
School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Uehara Takashi
Graduate School of Frontier Science, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
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Takagi Shin-ichi
Graduate School of Frontier Science, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
著作論文
- Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique
- Evaluation of Electron and Hole Mobility at Identical Metal–Oxide–Semiconductor Interfaces by using Metal Source/Drain Ge-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
- Fabrication of III–V on Insulator Structures on Si Using Microchannel Epitaxy with a Two-Step Growth Technique
- Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy