TAKAGI Shinichi | Graduate School of Frontier Science, The Univ. of Tokyo
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概要
関連著者
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TAKAGI Shinichi
Graduate School of Frontier Science, The Univ. of Tokyo
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Takagi Shinichi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Sugahara Satoshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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SUGAHARA Satoshi
Graduate School of Frontier Science, The Univ. of Tokyo
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SHICHIJO Masato
Graduate School of Frontier Science, The Univ. of Tokyo
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Shichijo Masato
Graduate School Of Frontier Science The Univ. Of Tokyo
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NUMATA Toshinori
MIRAI(ASET)
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TAKEDA Koji
School of Engineering, The Univ. of Tokyo
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UCHIDA Yasutaka
Teikyo University of Science and Technology
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Hirakawa Kazuhiko
Institute Of Industrial Science And Institute For Nano Quantum Information Electronics University Of
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Ishikawa Hiroto
Graduate School Of Frontier Science The Univ. Of Tokyo
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Uchida Yasutaka
Teikyo Univ. Of Sci & Tech Dept Of Media Science
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NAKANE Ryosho
School of Engineering, The Univ. of Tokyo
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KUMAGAI Hiroshi
Graduate School of Frontier Science, The Univ. of Tokyo
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HOSHII Takuya
Graduate School of Frontier Science, The Univ. of Tokyo
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Nakane Ryosho
School Of Engineering The Univ. Of Tokyo
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Hoshii Takuya
Graduate School Of Frontier Science The Univ. Of Tokyo
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Takeda Koji
School Of Engineering The Univ. Of Tokyo
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Uehara Takashi
Graduate School Of Frontier Science The Univ. Of Tokyo
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MATSUBARA Hiroshi
Graduate School of Frontier Science, The Univ. of Tokyo
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PARK Kyung-Hwa
Institute of Industrial Science, University of Tokyo
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Park Kyung-hwa
Institute Of Industrial Science University Of Tokyo
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Takagi Shinichi
Graduate School Of Frontier Science University Of Tokyo
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Kumagai Hiroshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Matsubara Hiroshi
Graduate School Of Frontier Science The Univ. Of Tokyo
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Hirakawa Kazuhiko
Institute of Industrial Science and INQIE, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Numata Toshinori
MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
著作論文
- Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs
- Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique
- Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge
- Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth
- Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si