低エネルギー質量分離イオンビーム照射装置を用いたSiO_2/Si基板へのインジウムイオン注入

概要

論文の詳細を見る
Implantation of In into SiO2 thin film substrates by mono-energetic In ion beams was examined with the use of a low-energy mass selected ion beam system. The goal of this study is to develop thin film based In-Si combined catalyzer for organic chemical reactions. In the experiments, In ions were generated by sputtering of an In2O3 target by Ar ions in a Freeman-type ion source and extracted to form, after mass selection, a mono-energetic beam with the peak energy of 470 eV. The ion beam was then injected into SiO2 thin films formed on Si substrates. By X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM) measurements, it was found that In nano particles were formed on the SiO2 thin film surface after the beam injections and the shapes of the particles varied depending on In ion dose.
日本真空協会の論文
2008-03-20