Molecular Resists Based on Cholate Derivatives for Electron-Beam Lithography
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-30
著者
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Arai Tadashi
Ulsi Research Department Central Research Laboratory Hitachi Ltd.
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Kasai Kohei
New Technology Development Section Tokyo Ohka Kogyo Co. Ltd.
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HIRAYAMA Taku
New Technology Development Section, Tokyo Ohka Kogyo Co., Ltd.
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SHIONO Daiju
New Technology Development Section, Tokyo Ohka Kogyo Co., Ltd.
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HADA Hideo
New Technology Development Section, Tokyo Ohka Kogyo Co., Ltd.
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ONODERA Junichi
New Technology Development Section, Tokyo Ohka Kogyo Co., Ltd.
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YAMAGUCHI Atsuko
ULSI Research Department, Center Research Laboratory, Hitachi, Ltd.
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SHIRAISHI Hiroshi
ULSI Research Department, Center Research Laboratory, Hitachi, Ltd.
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FUKUDA Hiroshi
ULSI Research Department, Center Research Laboratory, Hitachi, Ltd.
関連論文
- Depth Profile and Line-Edge Roughness of Low-Molecular-Weight Amorphous Electron Beam Resists
- Molecular Resists Based on Cholate Derivatives for Electron-Beam Lithography
- Acid-breakable Resin-based Resist for Nanofabrication Electron-beam Lithography
- Outgassing Characteristics of Low-Molecular-Weight Resists for Extreme Ultraviolet Lithography
- Outgassing Analysis in EUV Resist
- New Photoresist Based on Amorphous Low Molecular Weight Polyphenols
- Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
- Characteristics of CA Resist in EUV Lithography
- Outgassing Characteristics of Low-Molecular-Weight Resists for Extreme Ultraviolet Lithography
- Molecular Resists Based on Cholate Derivatives for Electron-Beam Lithography