六方晶フェライトドットアレイの形成及びその磁気特性(薄膜プロセス・材料, 一般)

概要

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A novel process to prepare hexagonal ferrite films with dot arrays has been proposed. Two immiscible elements, which are Al and Si, were first deposited onto Si(111) substrate at various temperatures. The microstructure of this kind of film depends on the concentration, and deposition temperature. Scanning electron microscopy results show that structures with Al dot arrays, in the size range of 30 to 50nm, embedded into amorphous Si matrix can be obtained by precise control of the sputtering condition. Amorphous Ba-Fe-O films were deposited onto the dot array films at room temperature, and then annealed to crystallize in part. Experimental results indicate that the amorphous Ba-Fe-O film on the Al dot can be crystallized with flash annealing the samples at 700℃ for 60 second. However, that on the amorphous Si keeps amorphous state. A structure with magnetic dot arrays embedded into nonmagnetic matrix has been achieved by this process. The magnetic properties of the samples have been discussed.
社団法人電子情報通信学会の論文
2005-11-04