Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-12-15
著者
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Natali Franck
Riber S.a.
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Damilano Benjamin
Centre National De La Recherche Scientifique-centre De Recherche Sur L'hetero-epitaxie Et Ses A
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DAMILANO Benjamin
CRHEA-CNRS
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GRANDJEAN Nicolas
CRHEA-CNRS
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MASSIES Jean
CRHEA-CNRS
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NATALI Franck
CRHEA-CNRS
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BYRNE Declan
CRHEA-CNRS
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DUSSAIGNE Amelie
CRHEA-CNRS, Rue B. Gregory, Parc de Sophia Antipolis
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Dussaigne Amelie
Crhea-cnrs Rue B. Gregory Parc De Sophia Antipolis
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Massies J
Centre National De La Recherche Scientifique-centre De Recherche Sur L'hetero-epitaxie Et Ses A
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Byrne Declan
Crhea-cnrs Rue B. Gregory Parc De Sophia Antipolis
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Grandjean N
Crhea-cnrs Rue B. Gregory Parc De Sophia Antipolis
関連論文
- Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
- Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
- Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)
- Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
- AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111) : Semiconductors
- Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry
- Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells : Semiconductors
- Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxy of GaN under N-rich Conditions using NH_3
- Violet InGaN/GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy Using NH_3
- Origin of the Blue Shift Observed in Highly Strained (Ga, In) As Quantum Wells Grown on GaAs (001) Vicinal Surfaces
- Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)
- A Chemical Etching Process to Obtain Clean InP {001} Surfaces
- Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
- Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots
- Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
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