Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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Mihailovic Martine
Laboratoire Des Sciences Et Materiaux Pour L'electronique Et D'automatique
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Natali Franck
Riber S.a.
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Vasson Aime
Laboratoire Des Sciences Et Materiaux Pour L'electronique Et D'automatique
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SEMOND Fabrice
CRHEA-CNRS
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MASSIES Jean
CRHEA-CNRS
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OLLIER Nadege
LASMEA-UMR 6602 UBP/CNRS, Universite Blaise Pascal-Clermont-Ferrand II
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NATALI Franck
CRHEA-CNRS
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BYRNE Declan
CRHEA-CNRS
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DISSEIX Pierre
LASMEA-UMR 6602 UBP/CNRS, Universite Blaise Pascal-Clermont-Ferrand II
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MIHAILOVIC Martine
LASMEA-UMR 6602 UBP/CNRS, Universite Blaise Pascal-Clermont-Ferrand II
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VASSON Aime
LASMEA-UMR 6602 UBP/CNRS, Universite Blaise Pascal-Clermont-Ferrand II
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LEYMARIE Joel
LASMEA-UMR 6602 UBP/CNRS, Universite Blaise Pascal-Clermont-Ferrand II
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Byrne Declan
Crhea-cnrs Rue B. Gregory Parc De Sophia Antipolis
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Semond Fabrice
Centre De Recherche Sur L'heteroepitaxie Et Ses Applications-centre National De La Recherche Sc
関連論文
- Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
- Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
- Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)
- Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
- AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111) : Semiconductors
- Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry
- GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures
- Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)
- Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
- Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector