Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon

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概要

• 論文の詳細を見る

• Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor processing.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-01-15

著者

• Dudek Richard

  Institute For Microstructural Sciences National Research Council

• DUBOZ Jean-Yves

  Thales Research and Technology

• MOSCA Mauro

  Thales Research and Technology

• REVERCHON Jean-Luc

  Thales Research and Technology

• DAMILANO Benjamin

  CRHEA-CNRS

• GRANDJEAN Nicolas

  CRHEA-CNRS

• SEMOND Fabrice

  CRHEA-CNRS

• MASSIES Jean

  CRHEA-CNRS

• Cassidy Tom

  Institute For Microstructural Sciences National Research Council

• Poitras Daniel

  Institute For Microstructural Sciences National Research Council

• Dudek Richard

  Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada

• Grandjean Nicolas

  CRHEA-CNRS, rue B. Gregory, 06560 Sophia Antipolis, France

• Due Lydie

  Thales Research and Technology, Domaine de de Corbeville, 91404 Orsay, France

• Legagneux Pierre

  Thales Research and Technology, Domaine de de Corbeville, 91404 Orsay, France

• Duboz Jean-Yves

  Thales Research and Technology, Domaine de de Corbeville, 91404 Orsay, France

• Damilano Benjamin

  CRHEA-CNRS, rue B. Gregory, 06560 Sophia Antipolis, France

• Massies Jean

  CRHEA-CNRS, rue B. Gregory, 06560 Sophia Antipolis, France

• Massies Jean

  CRHEA–CNRS, Rue Bernard Grégory, Sophia-Antipolis, F-06560 Valbonne, France

• Cassidy Tom

  Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada

• Semond Fabrice

  CRHEA-CNRS, rue B. Gregory, 06560 Sophia Antipolis, France

• Semond Fabrice

  CRHEA–CNRS, Rue Bernard Grégory, Sophia-Antipolis, F-06560 Valbonne, France

• Dua Lydie

  Thales Research and Technology, Domaine de de Corbeville, 91404 Orsay, France

関連論文

• Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
• Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)
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• Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime
• Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)
• Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
• Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
• Blue Light-Emitting Diodes Grown on ZnO Substrates
• Blue Light-Emitting Diodes Grown on ZnO Substrates
• Blue Light-Emitting Diodes Grown on ZnO Substrates

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