Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-01-15

著者

• De L'isle

  Thales Research And Technology

• Dudek Richard

  Institute For Microstructural Sciences National Research Council

• DUBOZ Jean-Yves

  Thales Research and Technology

• DUA Lydie

  Thales Research and Technology

• LEGANEUX Pierre

  Thales Research and Technology

• MOSCA Mauro

  Thales Research and Technology

• REVERCHON Jean-Luc

  Thales Research and Technology

• DAMILANO Benjamin

  CRHEA-CNRS

• GRANDJEAN Nicolas

  CRHEA-CNRS

• SEMOND Fabrice

  CRHEA-CNRS

• MASSIES Jean

  CRHEA-CNRS

• POITRAS Daniel

  Institute for Microstructural Sciences, National Research Council

• CASSIDY Tom

  Institute for Microstructural Sciences, National Research Council

• Poitras Daniel

  Institute For Microstructural Sciences National Research Council

関連論文

• Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
• Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)
• Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
• Spectroscopy of a Bulk GaN Microcavity Grown on Si(111)
• Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
• Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
• Blue Light-Emitting Diodes Grown on ZnO Substrates
• Blue Light-Emitting Diodes Grown on ZnO Substrates
• Blue Light-Emitting Diodes Grown on ZnO Substrates

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