Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-01
著者
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Damilano Benjamin
Centre National De La Recherche Scientifique-centre De Recherche Sur L'hetero-epitaxie Et Ses A
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MASSIES Jean
Centre National de la Recherche Scientifique-Centre de Recherche sur l'Hetero-Epitaxie et ses Applic
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GRANDJEAN Nicolas
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CNRS, Rue B.Gregory, Parc de Sophia A
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Massies J
Centre National De La Recherche Scientifique-centre De Recherche Sur L'hetero-epitaxie Et Ses A
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Massies Jean
Centre De Recherche Sur L' Hetero-epitaxie Et Ses Applications Centre National De Le Recherche
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Grandjean N
Crhea-cnrs Rue B. Gregory Parc De Sophia Antipolis
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Grandjean Nicolas
Centre De Recherche Sur L' Hetero-epitaxie Et Ses Applications Centre National De Le Recherche
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VEZIAN Stephane
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scien
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Vezian Stephane
Centre De Recherche Sur L'hetero-epitaxie Et Ses Applications Centre National De La Recherche S
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Damilano Benjamin
Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Rue B. Gregory, 06560 Valbonne, France
関連論文
- Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
- Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
- AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111) : Semiconductors
- Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry
- Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells : Semiconductors
- Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxy of GaN under N-rich Conditions using NH_3
- Violet InGaN/GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy Using NH_3
- Origin of the Blue Shift Observed in Highly Strained (Ga, In) As Quantum Wells Grown on GaAs (001) Vicinal Surfaces
- Interface Effects on the Photoluminescence of GaAs/GaInP Quantum Wells
- Critical Thickness for Islanded Growth of Highly Strained In_xGa_As on GaAs(001)
- A Chemical Etching Process to Obtain Clean InP {001} Surfaces
- Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots