Critical Thickness for Islanded Growth of Highly Strained In_xGa_<1-x>As on GaAs(001)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-10-01
著者
-
MASSIES Jean
Centre National de la Recherche Scientifique-Centre de Recherche sur l'Hetero-Epitaxie et ses Applic
-
GRANDJEAN Nicolas
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CNRS, Rue B.Gregory, Parc de Sophia A
-
Massies Jean
Centre De Recherche Sur L'hetero-epitaxie Et Ses Applications Centre National De La Recherche S
-
Massies Jean
Centre De Recherche Sur L' Hetero-epitaxie Et Ses Applications Centre National De Le Recherche
-
Grandjean Nicolas
Centre De Recherche Sur L'hetero-epitaxie Et Ses Applications Centre National De La Recherche S
-
Grandjean Nicolas
Centre De Recherche Sur L' Hetero-epitaxie Et Ses Applications Centre National De Le Recherche
-
RAYMOND Frederic
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scien
-
Raymond Frederic
Centre De Recherche Sur L'hetero-epitaxie Et Ses Applications Centre National De La Recherche S
関連論文
- Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
- AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111) : Semiconductors
- Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry
- Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells : Semiconductors
- Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
- Violet InGaN/GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy Using NH_3
- Interface Effects on the Photoluminescence of GaAs/GaInP Quantum Wells
- Critical Thickness for Islanded Growth of Highly Strained In_xGa_As on GaAs(001)
- Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots