Massies Jean | Centre De Recherche Sur L' Hetero-epitaxie Et Ses Applications Centre National De Le Recherche

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著作論文

Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111) : Semiconductors
Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry
Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells : Semiconductors
Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
Violet InGaN/GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy Using NH_3
Interface Effects on the Photoluminescence of GaAs/GaInP Quantum Wells
Critical Thickness for Islanded Growth of Highly Strained In_xGa_As on GaAs(001)
Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots

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