Massies J | Centre National De La Recherche Scientifique-centre De Recherche Sur L'hetero-epitaxie Et Ses A

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著作論文

Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector
AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111) : Semiconductors
Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry
Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells : Semiconductors
Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
Molecular Beam Epitaxy of GaN under N-rich Conditions using NH_3
Violet InGaN/GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy Using NH_3
Origin of the Blue Shift Observed in Highly Strained (Ga, In) As Quantum Wells Grown on GaAs (001) Vicinal Surfaces
A Chemical Etching Process to Obtain Clean InP {001} Surfaces

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