A Chemical Etching Process to Obtain Clean InP {001} Surfaces
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概要
- 論文の詳細を見る
We report on a new chemical preparation procedure of InP {001} substrates which results in clean, oxide free surfaces, without the need of a high temperature thermal desorption of oxided surface phases. It mainly consists of a deoxidation by HF-ethanol solution, performed on a spinner operated in a nitrogen dry box, after a standard chemical etching using H_2SO_4/H_2O_2/H_2O mixture. It is shown that such chemically deoxided surfaces are obtained with the typical InP {001} surface reconstructions for a significantly lower annealing temperature than those prepared without this deoxidation step.
- 社団法人応用物理学会の論文
- 1986-08-20
著者
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Massies J
Centre National De La Recherche Scientifique-centre De Recherche Sur L'hetero-epitaxie Et Ses A
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Massies Jean
Laboratoire Physique Du Solide Et Energie Solaire C.n.r.s.
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CONTOUR Jean-Pierre
Laboratoire de Physique du Solide et Energie Solaire, CNRS
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TURCO Francoise
Laboratoire Physique du Solide et Energie Solaire, C.N.R.S.
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