Development of a Fast-Cycle, Extremely High-Vacuum System Using Cryopump
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概要
- 論文の詳細を見る
Aiming at extremely high-vacuum (XHV, less than 1 × 10<SUP>-8</SUP> Pa (7.5 × 10<SUP>-11</SUP> Torr)) sputter deposition and atomic manipulation, a fast-cycle exhausting system capable of attaining XHV has been developed by assembling a main valve between a main chamber and a side chamber. The main chamber is exhausted by a bakeable cryopump, and the pumping characteristic is measured. Ultimate pressure is attained at less than 8 × 10<SUP>-11</SUP> Pa (6 × 10<SUP>-13</SUP> Torr) in the main chamber after 17 hours of baking at about 200°C and evacuation for 60 h, and 1 × 10<SUP>-8</SUP> Pa (7.5 × 10<SUP>-11</SUP> Torr) after evacuation for 60 h without any baking. In the actual system operation transferring a substrate from the side chamber to the main chamber, XHV is attained in 3 min, and 1 × 10<SUP>-9</SUP> Pa (7.5 × 10<SUP>-12</SUP> Torr) in 90 min. This system is expected to be very effective for thin-film deposition and atomic manipulation.
- 日本真空協会の論文
- 1994-08-20
著者
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Kikuchi Toshio
Department of Cardiovascular Surgery National Cardiovascular Center
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ASAMAKI Tatsuo
Department of Electrical Engineering, Science University of Tokyo
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Asamaki Tatsuo
Department Of Electrical Engineering Science University Of Tokyo
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Ishibashi K
Anelva Corp. Tokyo Jpn
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ISHIBASHI Keiji
Department of Electrical Engineering, Science University of Tokyo
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Ishibashi Keiji
Department Of Electrical Engineering Science University Of Tokyo
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Kikuchi Toshio
Department Of Electrical Engineering Science University Of Tokyo
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