Electrical Properties of N Ion Implanted Layer in (11^^<[-]>00)-Oriented 6H-SiC
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概要
- 論文の詳細を見る
- 2001-01-15
著者
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Tanabe Hitoshi
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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SATOH Masataka
Research Center of Ion Beam Technology, Hosei University
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NAKAMURA Tomonori
Research Center of Ion Beam Technology and College of Engineering, Hosei University
関連論文
- Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
- Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
- Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
- Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
- Electrical Properties of N Ion Implanted Layer in (11^^00)-Oriented 6H-SiC
- Rapid Oxidation of SiC Using Microwave-Discharged O_2 Plasma at Low Temperatures (< 300℃) : Semiconductors
- Electrical Properties of N Ion Implanted Layer in $(1\bar{1}00)$-Oriented 6H-SiC