Tanabe Hitoshi | Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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概要
関連著者
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Tanabe Hitoshi
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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SATOH Masataka
Research Center of Ion Beam Technology, Hosei University
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Satoh Masataka
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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NAKAMURA Tomonori
Research Center of Ion Beam Technology and College of Engineering, Hosei University
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Nakamura Tomonori
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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Tanabe Hitoshi
Research Center of Ion Beam Technology and College of Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan
著作論文
- Electrical Properties of N Ion Implanted Layer in (11^^00)-Oriented 6H-SiC
- Electrical Properties of N Ion Implanted Layer in $(1\bar{1}00)$-Oriented 6H-SiC