Electrical Properties of N Ion Implanted Layer in $(1\bar{1}00)$-Oriented 6H-SiC
スポンサーリンク
概要
- 論文の詳細を見る
The electrical properties of a N ion implanted layer in $(1\bar{1}00)$-oriented 6H-SiC are investigated by means of Van der Pauw and Hall effect measurements. The samples are implanted using N ions at an energy of 30 keV with a dose ranging from $5 \times 10^{14}$ to $5 \times 10^{15}$/cm2 at room temperature. The samples annealed at 1500$^\circ$C for 10 min show very low sheet resistance of the order of 102 $\Omega/\Box$. The low sheet resistance is correlated to the high electrical activation of N impurities in the implanted layer with good crystalline quality.
- 2001-01-15
著者
-
Tanabe Hitoshi
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
-
Satoh Masataka
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
-
Nakamura Tomonori
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
-
Tanabe Hitoshi
Research Center of Ion Beam Technology and College of Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan
関連論文
- Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
- Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
- Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
- Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
- Electrical Properties of N Ion Implanted Layer in (11^^00)-Oriented 6H-SiC
- Rapid Oxidation of SiC Using Microwave-Discharged O_2 Plasma at Low Temperatures (< 300℃) : Semiconductors
- Electrical Properties of N Ion Implanted Layer in $(1\bar{1}00)$-Oriented 6H-SiC