Rapid Oxidation of SiC Using Microwave-Discharged O_2 Plasma at Low Temperatures (< 300℃) : Semiconductors
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概要
- 論文の詳細を見る
The rapid oxidation of 6H--SiC has been achieved using O_2 plasma, which is discharged by a microwave of 2.45 GHz at low temperatures below 300℃. X-ray photoelectron spectrometry (XPS) measurements reveal that O_2 plasma processing oxidizes SiC into the stoichiometric SiO_2 layer. The SiO_2 layer with a thickness of 22 nm is obtained after O_2 plasma processing for 10 min at a sample temperature of 200℃, which is 15 times faster than thermal oxidation in dry O_2 gas at 1150℃. There is a large amount of interface state at the SiO_2/SiC interface in an as-oxidized sample as well as in the case of the thermal oxidation. The formed SiO_2 layer shows a break down field strength of about 9.5 MV/cm, which is comparable to that of the thermal oxide layer.
- 社団法人応用物理学会の論文
- 2002-03-01
著者
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Satoh Masataka
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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NAKAMURA Tomonori
Research Center of Ion Beam Technology and College of Engineering, Hosei University
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SHIMADA Hisanori
Research Center of Ion Beam Technology and College of Engineering, Hosei University
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YANAGIHARA Sachiko
Research Center of Ion Beam Technology and College of Engineering, Hosei University
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Shimada Hisanori
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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Nakamura Tomonori
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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Yanagihara Sachiko
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
関連論文
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- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
- Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
- Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
- Electrical Properties of N Ion Implanted Layer in (11^^00)-Oriented 6H-SiC
- Rapid Oxidation of SiC Using Microwave-Discharged O_2 Plasma at Low Temperatures (< 300℃) : Semiconductors
- Electrical Properties of N Ion Implanted Layer in $(1\bar{1}00)$-Oriented 6H-SiC