NAKAMURA Tomonori | Research Center of Ion Beam Technology and College of Engineering, Hosei University
スポンサーリンク
概要
関連著者
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NAKAMURA Tomonori
Research Center of Ion Beam Technology and College of Engineering, Hosei University
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Tanabe Hitoshi
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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SATOH Masataka
Research Center of Ion Beam Technology, Hosei University
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Satoh Masataka
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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SHIMADA Hisanori
Research Center of Ion Beam Technology and College of Engineering, Hosei University
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YANAGIHARA Sachiko
Research Center of Ion Beam Technology and College of Engineering, Hosei University
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Shimada Hisanori
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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Nakamura Tomonori
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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Yanagihara Sachiko
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
著作論文
- Electrical Properties of N Ion Implanted Layer in (11^^00)-Oriented 6H-SiC
- Rapid Oxidation of SiC Using Microwave-Discharged O_2 Plasma at Low Temperatures (< 300℃) : Semiconductors