スポンサーリンク
Univ. Tokushima Tokushima‐shi Jpn | 論文
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile
- High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- Multi-Dipole Sources Identification from EEG Topography Using System Identification Method(Biological Engineering)
- Analysis of Optical Processing for Recognition of BPSK Optical Codes Using Collinear Acoustooptic Switches for Photonic Routing Network(Electromagnetics in Information Processing,Recent Progress in Electromagnetic Theory and Its Applicati
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- Expression of Human Erythropoietin in Cultured Tobacco Cells
- A Study on Ohmic Contact to Dry-Etched p-GaN
- Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
- The Efficient GMD Decoders for BCH Codes (Special Issue on Multiple-Valued Logic)
- On a Recursive Form of Welch-Berlekamp Algorithm
- Wavelength Dependence of Optical Waveguide-Type Devices for Recognition of QPSK Routing Labels
- Optical Label Recognition Using Tree-Structure Self-Routing Circuits Consisting of Asymmetric X-Junctions(Optoelectronics)