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ULVAC Japan, Ltd. | 論文
- Usefulness of Magnetic Neutral Loop Discharge Plasma in Plasma Processing
- Realistic Etch Yield of Fluorocarbon ions in SiO_2 Etch Process
- Measurements of Molecular Densities in Low Pressure Discharge Plasmas Using Laser Raman Scattering
- Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
- Construction and Performance Test of a Magnetically Levitated Transport System in Vacuum Using High-T_c Superconductors
- Epitaxial Growth of α-Fe Film on Si(111) Substrate by Low-Energy Direct Ion Beam Deposition
- Operation of a CSL Gauge in Extremely High Vacuum
- Observation of Induction Power Dependence on the Magnetic Neutral Loop Discharge Plasma Thermalization Phenomena
- XHV System for Surface Analysis Using a New Getter to Reduce Hydrogen
- Preparation of SrBi_2Ta_Nb_O_9 Ferroelectric Thin Films by RF Sputtering on Large Substrate
- Morphological Investigation of Cracks in TiN and Ti Films Coated on Stainless Steel Coils Caused by Bulge-Press Forming
- A Dry Process for Stripping As^+ Ion-Implanted Photoresist
- Measurements of Parameters of Two-Electron-Temperature Plasma Produced by Electron Cyclotron Resonance