Preparation of SrBi_2Ta_<1.5>Nb_<0.5>O_9 Ferroelectric Thin Films by RF Sputtering on Large Substrate
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概要
- 論文の詳細を見る
Ferroelectric SrBi_2(Ta, Nb)_2O_9(SBTN)thin films were prepared by RF magnetron spuuering utilizing a multichamber production tool(ULVAC CERAUS ZX1000). Accurate and dynamic compositional control provided by this method results in excellent ferroelectric performances such as large P_r up to 15 μC/cm^2, at least 109 cycles fatigue free and good 6-inch wafer uniformity. Good process reproducibility was also confirmed in terms of deposition rate, composition, and electrical properties through a 30-wafer nonstop sputtering test. These results indicate that the SBTN sputtering process is promising for ferroelectric memory production.
- 社団法人応用物理学会の論文
- 2000-09-30
著者
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SUU Koukou
Institute for Super Materials, ULVAC Japan, Ltd.
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MIYAGUCHI Yusuke
Institute for Super Materials, ULVAC JAPAN, Ltd.
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Suu K
Ulvac Inc. Shizuoka Jpn
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Masuda T
Division Of Polymer Chemistry Graduate School Of Engineerng Kyoto University
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Suu Koukou
Ulvac Japan Ltd.
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MASUDA Takeshi
ULVAC Japan, Ltd.
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MIYAGUCHI Yusuke
ULVAC Japan, Ltd.
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SUN Shan
Ramtron International Carp.
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Miyaguchi Yusuke
Ulvac Japan Ltd.
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