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Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd. | 論文
- Correlation between Dislocation Pits in GaP LPE Layers and LEC Substrates
- A Focused-Beam Type Laser Interferometric Dilatometer : Interferometry
- A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate Oxide
- Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions
- Characterization of Computer Controlled Gap Single Crystals : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Internal Q-Switching in Ga_Al_xAs-GaAs Heterojunction Lasers
- Carrier and Radiation Confinements in (Ga, Al)As-GaAs Hetero-junction Lasers
- Notes on Compressible Gasket and Bridgman-Anvil Type High Pressure Apparatus
- Characteristics of Link-Type Cubic Anvil, High Pressure-High Temperature Apparatus
- Electron Acceleration by an Alternating Periodic Structure
- Measurements of Lags in Vidicons Using GaP Red-Emitting Diodes as a Light Source
- An Experimental Si Vidicon Target without Mosaic Structure
- Temperature Effect on Cut-off Frequency of Electrohydrodynamic Instability in Nematic Liquids
- A 256bit Nonvolatile Static Random Access Memory with MNOS Memory Transistors : A-5: FIELD EFFECT TRANSISTORS (II)
- Sticking Coefficients and Critical Condensation Conditions of Nickel on Polyfluoroethylene-Propylene
- A New Chemical Dry Etching : A-1: DEVICE TECHNOLOGY (I)
- Ultraviolet Luminescence of Ternary Compounds (La, Al, Ce)F3
- Effects of Annealing under High Static Pressure on Precipitation Behavior of Fission Gas Bubbles in Irradiated UO2
- Deformation and fracture behavior of zircaloy-2 deformed at constant strain rate in iodine environment. I. Uniaxial tension test.:Uniaxial Tension Test
- Neon Solubility in Liquid Sodium