Carrier and Radiation Confinements in (Ga, Al)As-GaAs Hetero-junction Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1970-04-05
著者
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Iida Seishi
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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UNNO Yoichi
Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.
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YAMAMOTO Motoyuki
Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.
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Unno Yoichi
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Yamamoto Motoyuki
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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IIDA Seishi
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
関連論文
- Internal Q-Switching in Ga_Al_xAs-GaAs Heterojunction Lasers
- Carrier and Radiation Confinements in (Ga, Al)As-GaAs Hetero-junction Lasers
- Spectral Characteristics and Inhomogeneities near Active Regions of Double-Heterostructure (GaAl)As-GaAs Lasers with Stripe Geometry Configuration
- Acceptors and the Edge Emissions in CdS and ZnSe
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