A 256bit Nonvolatile Static Random Access Memory with MNOS Memory Transistors : A-5: FIELD EFFECT TRANSISTORS (II)
スポンサーリンク
概要
著者
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Nishi Y.
Toshiba Corporation
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Tamaru K.
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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SAITO S.
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
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ENDO N.
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
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UCHIDA .
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
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TANAKA T.
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
関連論文
- Panel Discussion ; "MOS" in Future
- A 256bit Nonvolatile Static Random Access Memory with MNOS Memory Transistors : A-5: FIELD EFFECT TRANSISTORS (II)