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Toshiba Microelectronics Corp. | 論文
- High Sensitivity 900-MHz ISM Band Transceiver(Analog Circuit Techniques and Related Topics)
- 0.012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
- Diffusion and Segregation of Carbon in SiO_2 Films
- Relation between Stress-Induced Leakage Current and Dielectric Breakdown in SiN-Based Antifuses
- A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS(Active Devices/Circuits,Microwave and Millimeter-Wave Technology)
- Low Output Offset,8-bit Signal Driver ICs for XGA/SVGA TFT-LCDs (特集高性能アナログ電子回路)
- 0.25 μm Electron Beam Direct Writing Techniques for 256 Mbit Dynamic Random Access Memory Fabrication
- Application of KrF Excimer Laser Lithography to 256Mb DRAM Fabrication (Special Issue on LSI Memories)
- A Novel High Density EEPROM Cells Using Poly-Gate Hole (POLE) Structure Suitable for Low Power Applications
- A Novel High-Density EEPROM Cell Using a Polysilicon-Gate Hole (POLE) Structure Suitable for Low-Power Applications