A Novel High Density EEPROM Cells Using Poly-Gate Hole (POLE) Structure Suitable for Low Power Applications

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• TAKEBUCHI Masataka

  Toshiba Co., Ltd.

• Noda Jun-ichiro

  Toshiba Corp.

• Yoshikawa Kuniyoshi

  Toshiba Corp.

• TOHYAMA Daisuke

  Toshiba Microelectronics Corp.

• UENO Shu

  Toshiba Corp.

• OSARI Kanji

  Toshiba Corp.

• Takebuchi Masataka

  Toshiba Co. Ltd.

• Takebuchi Masataka

  Toshiba Corp.

関連論文

• Preparation and Characterization of Epitaxial BaTiO_3 Thin Films by Low Frequency Sputtering
• A Novel High Density EEPROM Cells Using Poly-Gate Hole (POLE) Structure Suitable for Low Power Applications
• A Novel High-Density EEPROM Cell Using a Polysilicon-Gate Hole (POLE) Structure Suitable for Low-Power Applications

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