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Toshiba Corp. Kawasaki Jpn | 論文
- Low Temperature Preparation of As-Sputtered Superconducting YBaCuO Thin Films by Magnetron Sputtering : Electrical Properties of Condensed Matter
- Meningeal carcinomatosis from an ovarian primary with complete response to adjuvant chemotherapy after cranial irradiation
- Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED
- Nano-structured surface fabrication for higher luminescent LED by self-assembled block copolymer lithography
- Advanced Materials for l93-nm Resists
- Dissolution Inhibitors for 193-nm Chemically Amplified Resists
- Highty Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength
- Role of Boundary Plasma in Lower-Hybrid-Frequency Heating of a Tokamak
- Loss Mechanism of Energetic Ions Produced during the Lower Hybrid Heating of JFT-2 Tokamak
- Parametric Heating by Radio-Frequency near the Lower Hybrid Frequency in the JFT-2 Tokamak
- Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
- Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
- Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
- High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
- High-Power InGaAlP Laser Diodes for High-Density Optical Recording
- Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer