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Tokyo Ohka Kogyo Co. Ltd. Kanagawa Jpn | 論文
- Investigation of Resist Characteristics of Fluoropolymer for 157nm Lithography
- Copolymers with Well-Controlled Molecular Weight and Low Polydispersity for 193 nm Photoresists
- Depth Profile and Line-Edge Roughness of Low-Molecular-Weight Amorphous Electron Beam Resists
- Resist Characteristics of Acryl Polymer with Methyl Acetal Protecting Group for 193 nm Lithography
- Step Structures and Terrace Width Ordering of Molecular Beam Epitaxially Grown GaAs Surfaces Observed by Scanning Tunneling Microscopy
- In Situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy
- Real-Time Observation of AlAs/GaAs Superlattice Growth by Coaxial Impact Collision Ion Scattering Spectroscopy
- Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer
- In Situ Analysis of Gallium Arsenide Surfaces by Coaxial Impact Collision Ion-Scattering Spectroscopy with an Off-Axis Ion Source
- Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU
- Soft X-Ray Reduction Lithography Using Multilayer Mirrors : X-Ray Lithography
- Soft X-Ray Reduction Lithography Using Multilayer Mirrors
- Contrast Measurement of Reflection Masks Fabricated from Cr and Ta Absorbers for Extreme Ultraviolet Lithography
- Outgassing Analysis in EUV Resist
- Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
- A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
- Control of Crystal Orientation of Ferroelectric SrBi_2Ta_2O_9 Thin Films with Multi-Seeding Layers
- Phase Transition in Ferroelectric SrBi_2Ta_2O_9) Thin Films with Change of Heat-treatment Temperature
- Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
- Role of Excess Bi in SrBi_2Ta_2O_9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method