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Sungkyunkwan Univ. Suwon Kor | 論文
- Policy-Based Management for Self-Managing Wireless Sensor Networks(Next Generation Network Management)
- 枝重み付き一般グラフの最大マッチングの下限と線形時間近似アルゴリズム
- Structural and Electrical Properties of HfO2/ Hf-silicate /Si Structures by rf-Magnetron Sputtering (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))
- Suppression of Edge Effects Based on Analytic Model for Leakage Current Reduction of Sub-40nm DRAM Device
- The Effect of the Interface Impurity in Fabrication of Spin Dependent Tannel Junction : Magnetism
- Preparation of Ultrafine Crystalline TiO_2 Powders from Aqueous TiCl_4 Solution by Precipitation
- Sintering and Electrical Properties of (CeO_2)_(Gd_2O_3)_ Powders Prepared by Glycine-Nitrate Process for Solid Oxide Fuel Cell Applications
- Static and dynamic Properties of the Vortices in Single Crystalline CeRu_2
- 1P1-12 フレキシブル電極パターンのガラス基板上への超音波ボンディングと諸条件の影響(ポスターセッション)
- 2-09P-48 プリント基板をフレキシブル基板間の接合強度に及ぼす溶接条件の影響(ポスターセッション 2)
- 2-09-03 超音波ボンディングされたフリップチップバンプとフレキシブル基板の接合強度への大気圧プラズマの影響(強力超音波)
- Characteristics under Bias-Temperature-Stress of Cu/Low-k a-SiCO: H Structures Prepared by Plasma Enhanced Chemical Vapor Deposition Using a Hexamethyldisilane Precursor and Cu Sputtering
- Effects of Post-Deposition Heat Treatment on the Properties of Low Dielectric Constant Plasma Polymerized Decahydronaphthalene Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition
- Lifetime property of flexible organic light emitting diodes with plasma polymer barrier layers
- Effects of N_2 Plasma Treatment of the Al Bottom Cathode on the Characteristics of Top-Emission-Inverted Organic-Light-Emitting Diodes
- Effects of NH_3 Plasma Treatment of the Substrate on Metal Organic Chemical Vapor Deposition of Copper Films
- Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
- Effect of Annealing Temperature on Dielectric Constant and Bonding Structure of Low-k SiCOH Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition
- Characteristics of polymer light emitting diodes with the LiF anode interfacial layer
- Properties of Low-k (k-2.05) Plasma Polymer Films Deposited by PECVD Using Decamethyl-cyclopentasiloxane and Cyclohexane as the Precursors