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Semiconductor Laboratory Mitsubishi Electric Corporation | 論文
- Electron Microscopic Observation of Oxide Crystals Grown on Thin Film of α-Brass at Elevated Temperature
- Mirror Coating of AlGaAs TJS Lasers by an Si/SiO_2 Reflector
- High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate : B-5: LASERS (2)
- Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
- Flip-Chip Mounted GaAs Power FET with Improved Performances in X to Ku Band : B-1: GaAs IC
- Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution
- A 100 W Static Induction Transistor Operating at 1 GHz : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
- Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
- Light Trapping for Thin-Film Silicon Solar Cells Fabricated on Insulator
- High Efficiency Al_xGa_As-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor : III-3: III-V COMPOUND SOLAR CELLS
- High Efficiency Al_xGa_As-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- A Dual-Stripe Phase-Locked Diode Laser
- Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen
- A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY