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Semiconductor Company Toshiba Corporation | 論文
- A Full-CMOS Single Chip Bluetooth LSI with 1.5 MHz-IF Receiver and Direct Modulation Transmitter(Low-Power System LSI, IP and Related Technologies)
- FeCoBN Magnetic Thin Film Inductor for MHz Switching Micro DC-DC Converters
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- A Fast f_c Automatic Tuning Circuit with Wide Tuning Range for WCDMA Direct Conversion Receiver Systems(Analog Circuits and Related SoC Integration Technologies)
- A Direct Conversion Receiver for W-CDMA Reducing Current Consumption to 31 mA(RF, Analog Circuit and Device Technologies)
- Phase Compensation Technique for a Low-Power Transconductor(Building Block, Analog Circuit and Device Technologies)
- A 0.13μm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
- Fully Differential Direct-Conversion Receiver for W-CDMA Reducing DC-Offset Variation(Analog Circuit and Device Technologies)
- Monitoring Reaction Products of Novolac Resists during Puddle Development
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections(Amplifier)(Recent Trends on Microwave and Millimeter Wave Application Technology)
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections
- A Compact 40GHz MMIC Power Amplifier with Improved Power Stage Design(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
- High Sensitivity 900-MHz ISM Band Transceiver(Analog Circuit Techniques and Related Topics)
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
- Extendibility of High Mobility HfSiON Gate Dielectrics
- Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Four States of Surface-Stabilized Ferroelectric Liquid Crystal with Parallel Rubbing
- Effect of Surface Pretilt Angle on Optical Properties of Surface-Stabilized Ferroelectric Liquid Crystals