Monitoring Reaction Products of Novolac Resists during Puddle Development
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
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Homma Tetsuya
Postgraduate Course Of Functional Control System Shibaura Institute Of Technology
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Homma Tetsuya
Postgraduate Courses Of Functional Control Systems Shibaura Institute Of Technology
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ETO Hideo
Postgraduate Courses of Functional Control Systems, Shibaura Institute of Technology
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ITO Yasuhiro
Semiconductor Company, Toshiba Corporation
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Eto Hideo
Postgraduate Courses Of Functional Control Systems Shibaura Institute Of Technology
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Ito Yasuhiro
Semiconductor Company Toshiba Corporation
関連論文
- Monitoring Reaction Products of Novolac Resists during Puddle Development
- A Highly Selective Photoresist Ashing Process for Silicon Nitride Films by Addition of Trifluoromethane : Semiconductors
- Photoresist Ashing Process Using Carbon Tetrafluoride Gas Plasma with Ammonia Gas Addition
- High-Speed Rotating-Disk Chemical Vapor Deposition Process for In-Situ Arsenic-Doped Polycrystalline Silicon Films
- Newly Developed High-Speed Rotating Disk Chemical Vapor Deposition Equipment for Poly-Si Films
- New Inductively Coupled Plasma System Using Divided Antenna for Photoresist Ashing
- Plasma Emission Spectrochemical Analysis of the Surface State of Particles in a Suspension System
- Newly Developed High-Speed Rotating Disk Chemical Vapor Deposition Equipment for Poly-Si Films
- High-Speed Rotating-Disk Chemical Vapor Deposition Process for In-Situ Arsenic-Doped Polycrystalline Silicon Films
- New Inductively Coupled Plasma System Using Divided Antenna for Photoresist Ashing
- Photoresist Ashing Process Using Carbon Tetrafluoride Gas Plasma with Ammonia Gas Addition
- Effect of Temperature on Photoresist Critical Dimension during Puddle Development