High-Speed Rotating-Disk Chemical Vapor Deposition Process for In-Situ Arsenic-Doped Polycrystalline Silicon Films
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概要
- 論文の詳細を見る
We have developed high-speed rotating-disk chemical vapor deposition (CVD) equipment for polycrystalline silicon (poly-Si) films. This CVD equipment has an enhanced ability to reduce the boundary layer thickness at a given temperature above a wafer surface, and to suppress vapor-phase reactions. We investigated in-situ arsenic-doped poly-Si film deposition using silane (SiH4), arsine (AsH3) and nitrogen (N2) in a high-speed rotating-disk CVD as functions of AsH3 flow rate and deposition temperature. Both the deposition rate and resistivity decreased with increasing AsH3 flow rate. A deposition rate of 120 nm/min, a resistivity of 16 m$\Omega$$\cdot$cm, a film thickness nonuniformity of $\pm 5$%, and a number of particles of less than 20 (over 200 nm in diameter) were achieved at a deposition temperature of 680°C for in-situ arsenic-doped poly-Si deposition on a 200-mm-diameter silicon (Si) wafer. Moreover, it was confirmed that the concentration of As in the poly-Si film was low at the initial stage of deposition, and that this process has a high gap filling capability in a hole of 0.18 μm width and 7 μm depth. It was also confirmed that there were conditions for a high step coverage of more than 1. These properties are inferred to be due to the adsorbed AsH3 preventing the adsorption of SiH4.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-15
著者
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Homma Tetsuya
Postgraduate Course Of Functional Control System Shibaura Institute Of Technology
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KOBAYASHI Hiroaki
Corporate Manufacturing Engineering Center, Toshiba Corporation
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Nagatomo Takao
Postgraduate Course Of Functional Control Systems Shibaura Institute Of Technology
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Terai Fujio
Postgraduate Course Of Functional Control System Shibaura Institute Of Technology
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Katsui Shuji
Semiconductor Company Toshiba Corporation
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Tamaoki Naoki
Corporate Research And Development Center Toshiba Corporation
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Nagatomo Takao
Postgraduate Course of Functional Control System, Shibaura Institute of Technology, 3-9-14 Shibaura, Minato-ku, Tokyo 108-8548, Japan
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Kobayashi Hiroaki
Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama 235-0017, Japan
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Tamaoki Naoki
Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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