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Semiconductor Company, Toshiba Corporation | 論文
- A Full-CMOS Single Chip Bluetooth LSI with 1.5 MHz-IF Receiver and Direct Modulation Transmitter(Low-Power System LSI, IP and Related Technologies)
- A 0.13µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
- FeCoBN Magnetic Thin Film Inductor for MHz Switching Micro DC-DC Converters
- A 1.2-3.2GHz CMOS VCO IC Utilizing Transformer-Based Variable Inductors and AMOS Varactors
- A 0.13μm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
- Monitoring Reaction Products of Novolac Resists during Puddle Development
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections(Amplifier)(Recent Trends on Microwave and Millimeter Wave Application Technology)
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections
- A Compact 40GHz MMIC Power Amplifier with Improved Power Stage Design(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
- High Sensitivity 900-MHz ISM Band Transceiver(Analog Circuit Techniques and Related Topics)
- Four States of Surface-Stabilized Ferroelectric Liquid Crystal with Parallel Rubbing
- Effect of Surface Pretilt Angle on Optical Properties of Surface-Stabilized Ferroelectric Liquid Crystals
- High-Speed Rotating-Disk Chemical Vapor Deposition Process for In-Situ Arsenic-Doped Polycrystalline Silicon Films
- Newly Developed High-Speed Rotating Disk Chemical Vapor Deposition Equipment for Poly-Si Films
- Influence of Deformation of Smectic Layer Structure on Dielectric Behavior of Ferroelectric Liquid Crystal
- Layer Tilt Angle of Chevron Structure in Surface-Stabilized Ferroelectric Liquid Crystals
- Models of Molecular Orientation in Surface-Stabilized Ferroelectric Liquid Crystals with High-Pretilt Aligning Film
- Experimental and Numerical Verification of Fatigue Life Estimation for Solder Bumps
- Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materia
- V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)